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CiteWeb id: 20130000035

CiteWeb score: 2789

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

The publication "Fundamentals of Modern VLSI Devices" is placed in the Top 10000 of the best publications in CiteWeb. Also in the category Engineering it is included to the Top 1000. Additionally, the publicaiton "Fundamentals of Modern VLSI Devices" is placed in the Top 100 among other scientific works published in 2013.
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