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CiteWeb id: 20090000038

CiteWeb score: 6886

DOI: 10.1038/nature07719

Problems associated with large-scale pattern growth of graphene constituteone of the mainobstacles tousing thismaterial indevice applications 1 . Recently, macroscopic-scale graphene films were prepared by two-dimensional assembly of graphene sheets chemically derived from graphite crystals and graphene oxides 2,3 . However, the sheet resistance of these films was found to be much larger than theoretically expected values. Here we report the direct synthesis of large-scale graphene films using chemical vapour depositiononthinnickellayers,andpresenttwodifferentmethods of patterning the films and transferring them to arbitrary substrates. The transferred graphene films show very low sheet resistanceof 280Vpersquare,with 80percentopticaltransparency. At low temperatures, the monolayers transferred to silicon dioxide substrates show electron mobility greater than 3,700cm 2 V 21 s 21 and exhibit the half-integer quantum Hall effect 4,5 ,i mplying that the quality of graphene grown by chemical vapour deposition is as highasmechanicallycleavedgraphene 6 .Employingtheoutstanding mechanical properties of graphene 7 , we also demonstrate the macroscopic use of these highly conducting and transparent electrodes in flexible, stretchable, foldable electronics 8,9 .

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