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CiteWeb id: 19760014595

CiteWeb score: 80

DOI: 10.1063/1.88831

The growth and operation of lattice‐matched double‐heterostructure InP/Ga0.17In0.83As0.34P0.66/InP light‐emitting diodes is reported. These diodes have an emission wavelength of 1.1 μm and quantum efficiencies of 4%.

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